mmbz5225-v to mmbz5267-v document number 85772 rev. 1.4, 21-oct-05 vishay semiconductors www.vishay.com 1 18078 12 3 small signal zener diodes features ? silicon planar power zener diodes. ? standard zener voltage tolerance is 5 % with a "b" suffix (e.g.: mmbz5225b-v), suffix ?c? is 2 % tolerance. ? high temperature soldering guaranteed: 260 c/4x10 seconds at terminals. ? these diodes are also available in minimelf case with the type designation zmm5225...zmm5267, sod-123 case with the type designation mmsz5225-v... mmsz5267-v. ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: sot-23 plastic case weight: approx. 8.8 mg packaging codes/options: gs18 / 10 k per 13 " reel (8 mm tape), 10 k/box gs08 / 3 k per 7 " reel (8 mm tape), 15 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified 1) on fr - 5 board using recommended solder pad layout 2) on alumina substrate thermal characteristics t amb = 25 c, unless otherwise specified 1) on fr - 5 board using recommended solder pad layout parameter test condition symbol value unit zener current (see table "characteristics") power dissipation t a = 25 c p tot 225 1) mw p tot 300 2) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 556 1) c/w maximum junction temperature t j 150 c storage temperature range t s -65 to + 175 c e3
www.vishay.com 2 document number 85772 rev. 1.4, 21-oct-05 mmbz5225-v to mmbz5267-v vishay semiconductors electrical characteristics t amb = 25 unless otherwise noted maximum v f = 0.9 v at i f = 10 ma 1) the zener impedance is derived from the 1 kh z ac voltage which results when an ac current having an rms value equal to 10 % of the zener current (i zt or i zk ) is superimposed on i zt or i zk . zener impedance is measured at two poi nts to insure a sharp knee on the breakdown curve and to eliminate unstable units. 3) measured at thermal equilibrium. partnumber marking code nominal zener voltage te s t current maximum dynamic impedance 1) ty p i c a l te m p. of coefficient maximum reverse leakage current v z @ i zt1 i zt1 z zt @ i zt z zk @ i zk = 0.25 ma vz i r v r v ma %/c a v mmbz5225-v 18e 3 20 30 1600 -0.075 50 1 mmbz5226-v 8a 3.3 20 28 1600 -0.07 25 1 mmbz5227-v 8b 3.6 20 24 1700 -0.065 15 1 mmbz5228-v 8c 3.9 20 23 1900 -0.06 10 1 mmbz5229-v 8d 4.3 20 22 2000 -0.055 5 1 mmbz5230-v 8e 4.7 20 19 1900 0.030 5 2 mmbz5231-v 8f 5.1 20 17 1600 0.030 5 2 mmbz5232-v 8g 5.6 20 11 1600 0.038 5 3 mmbz5233-v 8h 6 20 7 1600 0.038 5 3.5 mmbz5234-v 8j 6.2 20 7 1000 0.045 5 4 mmbz5235-v 8k 6.8 20 5 750 0.05 3 5 mmbz5236-v 8l 7.5 20 6 500 0.058 3 6 mmbz5237-v 8m 8.2 20 8 500 0.062 3 6.5 mmbz5238-v 8n 8.7 20 8 600 0.065 3 6.5 mmbz5239-v 8p 9.1 20 10 600 0.068 3 7 mmbz5240-v 8q 10 20 17 600 0.075 3 8 mmbz5241-v 8r 11 20 22 600 0.076 2 8.4 mmbz5242-v 8s 12 20 30 600 0.077 1 9.1 mmbz5243-v 8t 13 9.5 13 600 0.079 0.5 9.9 mmbz5244-v 8u 14 9 15 600 0.082 0.1 10 mmbz5245-v 8v 15 8.5 16 600 0.082 0.1 11 mmbz5246-v 8w 16 7.8 17 600 0.083 0.1 12 mmbz5247-v 8x 17 7.4 19 600 0.084 0.1 13 mmbz5248-v 8y 18 7 21 600 0.085 0.1 14 mmbz5249-v 8z 19 6.6 23 600 0.086 0.1 14 mmbz5250-v 81a 20 6.2 25 600 0.086 0.1 15 mmbz5251-v 81b 22 5.6 29 600 0.087 0.1 17 mmbz5252-v 81c 24 5.2 33 600 0.087 0.1 18 mmbz5253-v 81d 25 5 35 600 0.089 0.1 19 mmbz5254-v 81e 27 4.6 41 600 0.090 0.1 21 mmbz5255-v 81f 28 4.5 44 600 0.091 0.1 21 mmbz5256-v 81g 30 4.2 49 600 0.091 0.1 23 mmbz5257-v 81h 33 3.8 58 700 0.092 0.1 25 mmbz5258-v 81j 36 3.4 70 700 0.093 0.1 27 mmbz5259-v 81k 39 3.2 80 800 0.094 0.1 30 mmbz5260-v 18f 43 3 93 900 0.095 0.1 33 mmbz5261-v 81m 47 2.7 105 1000 0.095 0.1 36 mmbz5262-v 81n 51 2.5 125 1100 0.096 0.1 39 mmbz5263-v 81p 56 2.2 150 1300 0.096 0.1 43 mmbz5264-v 81q 60 2.1 170 1400 0.097 0.1 46 mmbz5265-v 81r 62 2 185 1400 0.097 0.1 47 mmbz5266-v 81s 68 1.8 230 1600 0.097 0.1 52 mmbz5267-v 81t 75 1.7 270 1700 0.098 0.1 56
mmbz5225-v to mmbz5267-v document number 85772 rev. 1.4, 21-oct-05 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. forward characteristics figure 2. capacitance vs. zener voltage figure 3. admissible power dissi pation vs. ambient temperature 1 8 114 ma 10 3 10 2 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 i f v f 0 0.2 0.4 0.6 0. 8 1 v t j = 100 c t j = 25 c 1 8 11 8 1000 7 5 4 3 2 7 5 4 3 2 100 10 pf c tot 1 2 3 45 2 3 45 10 100 v v z at i z = 5 ma t j = 25 c v r = 1 v v r = 2 v v r = 1 v v r = 2 v 1 8 672 0 100 200 c 250 m w 200 150 100 50 0 p tot t am b figure 4. pulse thermal resistance vs. pulse duration 1 8 116 0.01 0.02 0.05 0.1 0.2 0.5 = 0 p i tp tp t t 10 3 c/ w 7 5 4 3 2 7 5 4 3 2 7 5 4 3 2 10 2 10 -5 10 -4 10 -3 10 -2 10 -1 110s 10 1 r tha tp
www.vishay.com 4 document number 85772 rev. 1.4, 21-oct-05 mmbz5225-v to mmbz5267-v vishay semiconductors package dimensions in mm (inches) 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) 1741 8 2. 8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.09 8 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) iso method e mountin g pad layout
mmbz5225-v to mmbz5267-v document number 85772 rev. 1.4, 21-oct-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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